| TYPE | DESCRIPTION |
|---|
| Case/Package | SC-89 |
| Drain to Source Resistance (on) (Rds) | 2.70 Ω |
| Polarity | P-Channel |
| Power Dissipation | 250 mW |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Gate to Source) | ±6.00 V |
| Continuous Drain Current (Ids) | 0.37A |
Dual P-Channel 20-V (D-S) MOSFET Feature Very Small Footprint High-Side Switching Low On-Resistance: 1.2 Low Threshold: 0.8 V (typ) Fast Switching Speed: 14 ns 1.8-V Operation Gate-Source ESD Protection Application Drivers: Relays, Solenoids, Lamps,Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
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