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SI9410BDY-T1-GE3
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SI9410BDY-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:Vishay Semiconductor
Category:MOSFETs
Case Package:SOIC
Description:Trans MOSFET N-CH 30V 6.2A 8Pin SOIC N T/R
Documentation:SI9410BDY-T1-GE3 Datasheet (6 Pages)Part Numbering System on1 Page
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SI9410BDY-T1-GE3 Datasheet PDF (6 Pages)
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SI9410BDY-T1-GE3 Specifications

TYPEDESCRIPTION
Number of Pins8 Pin
Case/PackageSOIC
Number of Positions8 Position
Drain to Source Resistance (on) (Rds)0.019 Ω
PolarityN-Channel
Power Dissipation1.5 W
Threshold Voltage1 V
Drain to Source Voltage (Vds)30 V
Continuous Drain Current (Ids)8.10 A
Operating Temperature (Max)150 ℃
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SI9410BDY-T1-GE3 Documents

SI9410BDY-T1-GE3 Datasheet
Vishay Semiconductor
6 Pages / 0.09 MByte
SI9410BDY-T1-GE3 Other Datasheet PDF
Vishay Semiconductor
9 Pages / 0.23 MByte
SI9410BDY-T1-GE3 Notice File
Vishay Semiconductor
2 Pages / 0.18 MByte

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