| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.048 Ω |
| Polarity | P-Channel, Dual P-Channel |
| Power Dissipation | 3.1 W |
| Drain to Source Voltage (Vds) | -20.0 V |
| Continuous Drain Current (Ids) | -4.00 A |
| Rise Time | 50 ns |
| Input Capacitance (Ciss) | 665pF @10V(Vds) |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -50 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Height | 1.55 mm |
| Operating Temperature | -50℃ ~ 150℃ |
The SI9933CDY-T1-E3 is a dual P-channel MOSFET housed in a surface-mount package. It is suitable for DC-to-DC converter and load switch applications.
● TrenchFET® power MOSFET
● 100% Rg and UIS tested
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