TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.23 Ω |
Polarity | N-Channel |
Power Dissipation | 34 W |
Threshold Voltage | 2 V |
Drain to Source Voltage (Vds) | 600 V |
Rise Time | 26 ns |
Fall Time | 22 ns |
Operating Temperature (Max) | 150 ℃ |
TYPE | DESCRIPTION |
---|
Packaging | Bulk |
Operating Temperature | -55℃ ~ 150℃ |
The SIHF15N60E-GE3 is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
● Low figure-of-merit(FOM) RON x Qg
● Low input capacitance (CISS)
● Reduced switching and conduction losses
● Ultra low gate charge
● Avalanche energy rated
● Halogen-free
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