TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Drain to Source Resistance (on) (Rds) | 280 mΩ |
Polarity | N-Channel |
Power Dissipation | 34 W |
Drain to Source Voltage (Vds) | 600 V |
Continuous Drain Current (Ids) | 15A |
Rise Time | 26 ns |
Input Capacitance (Ciss) | 1350pF @100V(Vds) |
Input Power (Max) | 180 W |
Fall Time | 22 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 34000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Minimum Packing Quantity | 50 |
Make an effective common source amplifier using this SIHF15N60E-E3 power MOSFET from Vishay. Its maximum power dissipation is 34000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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