| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.23 Ω |
| Polarity | N-Channel |
| Power Dissipation | 34 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 600 V |
| Rise Time | 51 ns |
| Fall Time | 33 ns |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ |
The SIHF15N60E-E3 is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
● Low figure-of-merit(FOM) RON x Qg
● Low input capacitance (CISS)
● Reduced switching and conduction losses
● Ultra low gate charge
● Avalanche energy rated
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