| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 250 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Polarity | PNP |
| Power Dissipation | 0.3 W |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 0.2A |
| hFE Min | 100 @10mA, 1V |
| Input Power (Max) | 300 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This PNP SMMBT3906LT3G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
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