TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 650 V |
Current Rating | 11.0 A |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 380 mΩ |
Polarity | N-Channel |
Power Dissipation | 33 W |
Threshold Voltage | 3 V |
Input Capacitance | 1.20 nF |
Gate Charge | 60.0 nC |
Drain to Source Voltage (Vds) | 650 V |
Breakdown Voltage (Drain to Source) | 650 V |
Continuous Drain Current (Ids) | 11.0 A |
Rise Time | 5 ns |
Input Capacitance (Ciss) | 1200pF @25V(Vds) |
Input Power (Max) | 33 W |
Fall Time | 5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 33 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.65 mm |
Size-Width | 4.85 mm |
Size-Height | 16.15 mm |
Operating Temperature | -55℃ ~ 150℃ |
Summary of Features:
● Low specific on-state resistance (R on
●A)
● Very low energy storage in output capacitance (E oss) @400V
● Low gate charge (Q g)
● Fieldproven CoolMOS™ quality
● CoolMOS™ technology has been manufactured by Infineon since 1998
●Benefits:
● High efficiency and power density
● Outstanding cost/performance
● High reliability
● Ease-of-use
●Target Applications:
● Consumer
● PC power
● Adapter
Infineon
15 Pages / 0.58 MByte
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