TYPE | DESCRIPTION |
---|
Number of Pins | 3 Pin |
Case/Package | D2PAK-263 |
Polarity | N-CH |
Drain to Source Voltage (Vds) | 600 V |
Continuous Drain Current (Ids) | 20A |
Rise Time | 51 ns |
Input Capacitance (Ciss) | 3000pF @25V(Vds) |
Fall Time | 6 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 208000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Feature
●• New revolutionary high voltage technology
●• Worldwide best RDS(on) in TO 220
●• Ultra low gate charge
●• Periodic avalanche rated
●• Extreme dv/dt rated
●• Ultra low effective capacitances
Infineon
14 Pages / 0.15 MByte
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Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon
Cool MOS Power Transistor Feature new revolutionary high voltage technology
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