| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 20.0 A |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.16 Ω |
| Polarity | N-Channel |
| Power Dissipation | 208 W |
| Threshold Voltage | 4.5 V |
| Input Capacitance | 3.00 nF |
| Gate Charge | 103 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 3000pF @25V(Vds) |
| Input Power (Max) | 208 W |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10 mm |
| Size-Width | 9.25 mm |
| Size-Height | 4.4 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The SPB20N60S5 is a 600V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is suitable for general purpose applications.
● New revolutionary high voltage technology
● Extreme dV/dt rated
● Ultra low effective capacitance
● Qualified according to JEDEC for target applications
● Improved transconductance
● Innovative high voltage technology
● Worldwide best RDS (ON)
● Periodic avalanche rated
Infineon
11 Pages / 0.64 MByte
Infineon
12 Pages / 0.34 MByte
Infineon
27 Pages / 1.55 MByte
Siemens Semiconductor
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon
Cool MOS Power Transistor Feature new revolutionary high voltage technology
Infineon
Cool MOS Power Transistor
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