| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -8.80 A |
| Case/Package | TO-252 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.23 Ω |
| Polarity | P-Channel |
| Power Dissipation | 42 W |
| Input Capacitance | 420 pF |
| Gate Charge | 15.0 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 8.80 A |
| Rise Time | 46 ns |
| Input Capacitance (Ciss) | 420pF @25V(Vds) |
| Input Power (Max) | 42 W |
| Fall Time | 14 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 42 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.41 mm |
| Operating Temperature | -55℃ ~ 175℃ |
Summary of Features:
● Enhancement mode
● Avalanche rated
● Pb-free lead plating; RoHS compliant
● Small Signal packages approved to AEC Q101
Infineon
9 Pages / 0.58 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
Trans MOSFET P-CH 60V 8.83A 3Pin(2+Tab) TO-252
Infineon
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, TO-252, 3Pin
Siemens Semiconductor
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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