TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 200 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -25.0 V |
Current Rating | -1.50 A |
Case/Package | TO-226-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 1 W |
Gain Bandwidth Product | 200 MHz |
Breakdown Voltage (Collector to Emitter) | 25 V |
hFE Min | 120 @100mA, 1V |
hFE Max | 300 |
Input Power (Max) | 1 W |
DC Current Gain (hFE) | 120 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 1000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Size-Length | 4.7 mm |
Size-Width | 3.93 mm |
Size-Height | 5.33 mm |
Operating Temperature | 150℃ (TJ) |
The SS8550CBU is a PNP Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation.
● Complimentary to SS8050
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