| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-363 |
| Polarity | P-CH |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 2A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ○ DC/DC Converter Application ○ High-Speed Switching Applications • 4.0 V drive • Low ON-resistance : RDS(ON) = 225mΩ max (@VGS = −4 V) : RDS(ON) = 117mΩ max (@VGS = −10 V)
Toshiba
6 Pages / 0.19 MByte
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