| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-363 |
| Polarity | N+P |
| Drain to Source Voltage (Vds) | 30V, 20V |
| Continuous Drain Current (Ids) | 0.5A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type High-Speed Switching Applications • Optimum for high-density mounting in small packages • Low ON-resistance Q1: RDS(ON) = 180mΩ (max) (@VGS = 2.5 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V)
Toshiba
9 Pages / 0.22 MByte
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