SSM6L39TU Datasheet PDF - Toshiba

TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications • N-ch: 1.5-V drive P-ch: 1.8-V drive • N-ch, P-ch, 2-in-1 • Low ON-resistance Q1 N-ch: Ron = 247 mΩ (max) (@VGS = 1.5 V) Ron = 190 mΩ (max) (@VGS = 1.8 V) Ron = 139 mΩ (max) (@VGS = 2.5 V) Q2 P-ch: Ron = 430 mΩ (max) (@VGS = −1.8 V) Ron = 294 mΩ (max) (@VGS = −2.5 V)