| TYPE | DESCRIPTION |
|---|
| Case/Package | ES-6 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 0.1A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switching Applications • Small package • Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Toshiba
5 Pages / 0.17 MByte
Toshiba
Trans MOSFET N-CH 30V 0.1A 6Pin US
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MOSFET NCHX2 (LF) S-MOS TRANSISTOR
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