| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-363 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 0.5A |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 145mΩ (max) (@VGS = 4.5 V) Ron = 180mΩ (max) (@VGS = 2.5 V)
Toshiba
6 Pages / 0.16 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
