| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-563 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 0.25A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type • High-Speed Switching Applications • Analog Switching Applications • 1.5-V drive • Suitable for high-density mounting due to compact package • Low ON-resistance RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V)
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