| TYPE | DESCRIPTION |
|---|
| Case/Package | UDFN6B |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 4A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
MOSFETs Silicon N-Channel MOS •Applications • Power Management Switches • DC-DC Converters 2. Features (1) 4.5V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 46 mΩ (max) (@VGS = 10 V) RDS(ON) = 64 mΩ (max) (@VGS = 4.5 V)
Toshiba
9 Pages / 0.23 MByte
Toshiba
Trans MOSFET N-CH 30V 4A 6Pin UDFN EP
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