TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 450 V |
Current Rating | 500 mA |
Case/Package | TO-92-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 3.4 Ω |
Polarity | N-Channel |
Power Dissipation | 900 mW |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 450 V |
Breakdown Voltage (Drain to Source) | 450 V |
Breakdown Voltage (Gate to Source) | ±50.0 V |
Continuous Drain Current (Ids) | 500 mA |
Rise Time | 21 ns |
Input Capacitance (Ciss) | 240pF @25V(Vds) |
Input Power (Max) | 900 mW |
Fall Time | 36 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 900mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Fairchild
8 Pages / 0.69 MByte
Fairchild
8 Pages / 0.65 MByte
ON Semiconductor
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ON Semiconductor
Small Signal Field-Effect Transistor, 0.5A I(D), 450V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
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