| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 32 Pin |
| Supply Voltage (DC) | 4.50V (min) |
| Operating Voltage | 4.5V ~ 5.5V |
| Case/Package | PLCC-32 |
| Supply Current | 25 mA |
| Number of Positions | 32 Position |
| Number of Bits | 8 Bit |
| Access Time | 70 ns |
| Memory Size | 500000 B |
| Access Time(Max) | 70 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 4.5V ~ 5.5V |
| Supply Voltage (Max) | 5.5 V |
| Supply Voltage (Min) | 4.5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 14.05 mm |
| Size-Width | 11.51 mm |
| Size-Height | 2.84 mm |
| Operating Temperature | -40℃ ~ 85℃ |
The SST39SF040-70-4I-NHE is a 4MB CMOS multi-purpose Flash Memory manufactured with SSTs proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The device writes with a 4.5 to 5.5V power supply. Featuring high performance byte-program, the device provides a maximum byte-program time of 20µsec. This device uses toggle bit or data# polling to indicate the completion of program operation. To protect against inadvertent write, it has on-chip hardware and software data protection schemes. Designed, manufactured and tested for a wide spectrum of applications, this device is offered with a guaranteed typical endurance of 100000 cycles. Data retention is rated at greater than 100 years.
● Superior reliability
● Low power consumption
● Sector-erase capability - uniform 4Kbyte word sectors
● Fast read access time - 70ns
● Latched address and data
● Automatic write timing - internal VPP generation
● Fast erase and byte-program
● End-of-write detection
● TTL I/O compatibility
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