| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 900 V |
| Current Rating | 12.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 100 W |
| Breakdown Voltage (Collector to Emitter) | 400 V |
| Continuous Collector Current | 12A |
| hFE Min | 10 @8A, 5V |
| Input Power (Max) | 100 W |
| DC Current Gain (hFE) | 10 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 100000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | 150℃ (TJ) |
The ST13009 is a NPN fast-switching Power Transistor manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds.
● Low spread of dynamic parameters
● High voltage capability
● Minimum lot-to-lot spread for reliable operation
● Very high switching speed
ST Microelectronics
11 Pages / 0.17 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
25 Pages / 0.25 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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