Description
●The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
●■ 100% avalanche tested
●■ High dv/dt and avalanche capabilities
●■ Low input capacitance and gate charge
●■ Low gate input resistance
●■ Tight process control and high manufacturing yields
●Applications
●■ Switching application
ST Microelectronics
17 Pages / 0.43 MByte
ST Microelectronics
N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK/D2PAK FDMESH MOSFET (WITH FAST DIODE)
ST Microelectronics
Power MOSFET, N Channel, 5.5A, 650V, 400mohm, 10V, 4V
ST Microelectronics
N-CHANNEL 600V 0.4Ω 11A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET
ST Microelectronics
N-channel 600V - 0.4Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh™ Power MOSFET (with fast diode)
ETC
N-channel 650V @ T Jmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET
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