| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.28 Ω |
| Polarity | N-Channel |
| Power Dissipation | 90 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 816 pF |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 12A |
| Rise Time | 16 ns |
| Input Capacitance (Ciss) | 816pF @50V(Vds) |
| Input Power (Max) | 90 W |
| Fall Time | 22 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 90W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.75 mm |
| Size-Width | 10.4 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | 150℃ (TJ) |
The STB14NM50N is a MDmesh™ II N-channel Power MOSFET developed using the second generation of MDmesh™ technology. The device associates a vertical structure with strip layout yield to lowest ON-resistance and gate charge. It is suitable for the most demanding high efficiency converters.
● 100% Avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
ST Microelectronics
22 Pages / 1.25 MByte
ST Microelectronics
3 Pages / 0.31 MByte
ST Microelectronics
26 Pages / 1.27 MByte
ST Microelectronics
10 Pages / 0.75 MByte
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