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STB18N60M2
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STB18N60M2 Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:MOSFETs
Case Package:TO-263-3
Description:STB18N60M2 Series 600V 13A 280mOhm N-channel Power MOSFET - TO-263-3
Documentation:STB18N60M2 Datasheet (22 Pages)Package Outline Dimension on10 Page11 Page12 Page13 Page14 Page
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STB18N60M2 Datasheet PDF (22 Pages)
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STB18N60M2 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-263-3
Number of Channels1 Channel
Drain to Source Resistance (on) (Rds)0.28 Ω
Power Dissipation110 W
Threshold Voltage3 V
Drain to Source Voltage (Vds)600 V
Breakdown Voltage (Drain to Source)600 V
Rise Time9 ns
Input Capacitance (Ciss)791pF @100V(Vds)
Input Power (Max)110 W
Fall Time10.6 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)110W (Tc)
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STB18N60M2 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Size-Length10.4 mm
Size-Width9.35 mm
Size-Height4.6 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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STB18N60M2 Documents

STB18N60M2 Datasheet
ST Microelectronics
22 Pages / 1.15 MByte
STB18N60M2 Packaging
ST Microelectronics
21 Pages / 1.17 MByte

STB18N60 Documents

STB18N60M2 Datasheet PDF
ST Microelectronics
STB18N60M2 Series 600V 13A 280mOhm N-channel Power MOSFET - TO-263-3
STB18N60DM2 Datasheet PDF
ST Microelectronics
D2PAK N-CH 600V 12A
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