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STB33N60M2
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STB33N60M2 Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:MOSFETs
Case Package:TO-263-3
Description:D2PAK N-CH 650V 26A
Documentation:STB33N60M2 Datasheet (16 Pages)Package Outline Dimension on13 Page
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STB33N60M2 Datasheet PDF (16 Pages)
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STB33N60M2 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-263-3
Number of Channels1 Channel
Drain to Source Resistance (on) (Rds)125 mΩ
PolarityN-CH
Power Dissipation190 W
Threshold Voltage3 V
Drain to Source Voltage (Vds)650 V
Breakdown Voltage (Drain to Source)600 V
Continuous Drain Current (Ids)26A
Rise Time9.6 ns
Input Capacitance (Ciss)1781pF @100V(Vds)
Input Power (Max)190 W
Fall Time9 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)55 ℃
Power Dissipation (Max)190W (Tc)
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STB33N60M2 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Operating Temperature-55℃ ~ 150℃ (TJ)
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STB33N60M2 Documents

STB33N60M2 Datasheet
ST Microelectronics
16 Pages / 1 MByte
STB33N60M2 Other Datasheet PDF
ST Microelectronics
16 Pages / 1 MByte
STB33N60M2 Packaging
ST Microelectronics
15 Pages / 1.02 MByte

STB33N60 Documents

STB33N60M2 Datasheet PDF
ST Microelectronics
D2PAK N-CH 650V 26A
STB33N60DM2 Datasheet PDF
ST Microelectronics
D2PAK N-CH 600V 25A
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