STB23N80K5 Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	TO-263-3
Description:	D2PAK N-CH 800V 16A
Documentation:	STB23N80K5 Datasheet (16 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

Click page to view the detail

STB23N80K5 Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	280 mΩ
Polarity	N-CH
Power Dissipation	190 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	800 V
Breakdown Voltage (Drain to Source)	800 V
Continuous Drain Current (Ids)	16A
Rise Time	9 ns
Input Capacitance (Ciss)	1000pF @100V(Vds)
Fall Time	9 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	190W (Tc)