| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Drain to Source Resistance (on) (Rds) | 0.0014 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 24 V |
| Continuous Drain Current (Ids) | 80.0 A |
| Rise Time | 275 ns |
| Input Capacitance (Ciss) | 7055pF @15V(Vds) |
| Input Power (Max) | 300 W |
| Fall Time | 94.4 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 10.4 mm |
| Size-Width | 9.35 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
This STB300NH02L power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 300000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes stripfet technology. This N channel MOSFET transistor operates in enhancement mode.
ST Microelectronics
14 Pages / 0.32 MByte
ST Microelectronics
15 Pages / 0.3 MByte
ST Microelectronics
STMICROELECTRONICS STB300NH02L MOSFET Transistor, N Channel, 80A, 24V, 1.4mohm, 10V, 2V
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