| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 35.0 A |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.038 Ω |
| Polarity | N-Channel |
| Power Dissipation | 115 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 15.0 A |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 1180pF @25V(Vds) |
| Input Power (Max) | 115 W |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 115W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.4 mm |
| Size-Width | 9.35 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The STB30NF10T4 is a STripFET™ II N-channel Power MOSFET with low gate charge. The device is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. It has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● Exceptional dV/dt capability
● 100% Avalanche tested
● Application oriented characterization
● -55 to 175°C Operating junction temperature range
ST Microelectronics
16 Pages / 0.49 MByte
ST Microelectronics
8 Pages / 0.21 MByte
ST Microelectronics
N-CHANNEL 100V 0.038Ω 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
