| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Dissipation | 375 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 74 ns |
| Input Power (Max) | 375 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 375 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.7 mm |
| Size-Width | 5.7 mm |
| Size-Height | 26.7 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
This STGWT60V60DF IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 375000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.
ST Microelectronics
16 Pages / 1.68 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 80A 375000mW 3Pin(3+Tab) TO-3P Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 3Pin TO-3P
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