| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Polarity | N-Channel |
| Power Dissipation | 190 W |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 27A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 2740pF @50V(Vds) |
| Fall Time | 60 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 190W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.4 mm |
| Size-Width | 9.35 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | 150℃ (TJ) |
Thanks to STMicroelectronics, both your amplification and switching needs can be taken care of with one component: the STB30NM50N power MOSFET. Its maximum power dissipation is 190000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.
ST Microelectronics
18 Pages / 0.6 MByte
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