| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 40.0 A |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.045 Ω |
| Polarity | N-Channel |
| Power Dissipation | 160 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 2.50 nF |
| Gate Charge | 75.0 nC |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 25.0 A, 40.0 A |
| Rise Time | 44 ns |
| Input Capacitance (Ciss) | 2500pF @25V(Vds) |
| Input Power (Max) | 160 W |
| Fall Time | 22 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 160W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.4 mm |
| Size-Width | 9.35 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters.
●■ Gate charge minimized
●■ Very low intrinsic capacitances
●■ Very good manufacturing repeatability
●■ Excellent figure of merit (RDS
●Qg)
●■ 100% avalanche tested
●Applications
●■ Switching application
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