TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 55 mΩ |
Polarity | N-Channel |
Power Dissipation | 160 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 250 V |
Breakdown Voltage (Drain to Source) | 250 V |
Continuous Drain Current (Ids) | 22.0 A |
Rise Time | 26 ns |
Input Capacitance (Ciss) | 2670pF @25V(Vds) |
Input Power (Max) | 160 W |
Fall Time | 20 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 160W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tape & Reel (TR) |
Size-Length | 10.4 mm |
Size-Width | 9.35 mm |
Size-Height | 4.6 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STB50NF25 is a STripFET™ II N-channel Power MOSFET designed to minimize On-resistance and gate charge. It is suitable as primary side switch allowing high efficiencies.
● 100% Avalanche tested
● Gate charge minimized
● Low intrinsic capacitances
● -55 to 150°C Operating junction temperature
ST Microelectronics
14 Pages / 0.33 MByte
ST Microelectronics
STMICROELECTRONICS STB50N25M5 MOSFET Transistor, N Channel, 14A, 250V, 55mohm, 10V, 4V
ST Microelectronics
Trans MOSFET N-CH 100V 50A 3Pin(2+Tab) D2PAK
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