| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-262-3 |
| Polarity | N-CH |
| Power Dissipation | 125 W |
| Drain to Source Voltage (Vds) | 800 V |
| Continuous Drain Current (Ids) | 5.2A |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 1138pF @25V(Vds) |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Make an effective common source amplifier using this STB7NK80Z-1 power MOSFET from STMicroelectronics. Its maximum power dissipation is 125000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ST Microelectronics
17 Pages / 0.91 MByte
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