| TYPE | DESCRIPTION |
|---|
| Case/Package | D2PAK |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 7A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
DESCRIPTION
●The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series comple
●ments the “FDmesh™” Advanced Technology.
●■ TYPICAL RDS(on) = 0.85Ω
●■ HIGH dv/dt CAPABILITY
●■ 100% AVALANCHE TESTED
●■ GATE CHARGE MINIMIZED
●■ LOW INTRINSIC CAPACITANCES
●■ VERY GOOD MANUFACTURING REPEATIBILITY
●■ FAST INTERNAL RECOVERY DIODE
ST Microelectronics
9 Pages / 0.35 MByte
ST Microelectronics
Power MOSFET, N Channel, 3.5A, 600V, 850mohm, 10V, 3.75V
ST Microelectronics
N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK FAST DIODE SUPERMESH MOSFET
ST Microelectronics
N-CHANNEL 600V 0.85Ω 7A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
N-channel 600 V - 0.85 Ω - 7 A - D2PAK, TO-220FP, TO-220 SuperFREDMesh⢠Power MOSFET
ST Microelectronics
N-CHANNEL 600V 0.85Ω 7A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
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