TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Voltage Rating (DC) | 700 V |
Current Rating | 7.50 A |
Case/Package | TO-263-3 |
Drain to Source Resistance (on) (Rds) | 1.20 Ω |
Polarity | N-Channel |
Power Dissipation | 115W (Tc) |
Drain to Source Voltage (Vds) | 700 V |
Breakdown Voltage (Drain to Source) | 700 V |
Breakdown Voltage (Gate to Source) | ±30.0 V |
Continuous Drain Current (Ids) | 7.50 A |
Input Capacitance (Ciss) | 1370pF @25V(Vds) |
Input Power (Max) | 115 W |
Power Dissipation (Max) | 115W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
DESCRIPTION
●The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs in cluding revolutionary MDmesh™ products.
●■ TYPICAL RDS(on) = 1.0 Ω
●■ EXTREMELY HIGH dv/dt CAPABILITY
●■ IMPROVED ESD CAPABILITY
●■ 100% AVALANCHE RATED
●■ GATE CHARGE MINIMIZED
●■ VERY LOW INTRINSIC CAPACITANCES
●■ VERY GOOD MANUFACTURING REPEATIBILITY
●APPLICATIONS
●■ HIGH CURRENT, HIGH SPEED SWITCHING
●■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
ST Microelectronics
14 Pages / 0.65 MByte
ST Microelectronics
N-CHANNEL 700V 1Ω 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
N-CHANNEL 700V 1Ω 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™ Power MOSFET
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