| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 450 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 90 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 10A |
| Rise Time | 7 ns |
| Input Capacitance (Ciss) | 850pF @50V(Vds) |
| Input Power (Max) | 90 W |
| Fall Time | 9 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 90W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | 150℃ (TJ) |
Description
●The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company"s strip layout and associates all advantages of reduced on resistance and fast switching with an intrinsic fast recovery body diode.It is therefore strongly recommended for bridge topologies, in particular
●■ The worldwide best RDS(on)
● area amongst the fast recovery diode devices
●■ 100% avalanche tested
●■ Low input capacitance and gate charge
●■ Low gate input resistance
●■ Extremely high dv/dt and avalanche capabilities
ST Microelectronics
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