| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 6.25 Ω |
| Polarity | N-Channel |
| Power Dissipation | 70 W |
| Threshold Voltage | 3.75 V |
| Drain to Source Voltage (Vds) | 1 kV |
| Rise Time | 6.5 ns |
| Input Capacitance (Ciss) | 499pF @25V(Vds) |
| Input Power (Max) | 70 W |
| Fall Time | 32.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 70W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STD2NK100Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, specialties is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs.
● Extremely high dV/dt capability
● 100% Avalanche tested
● Very low intrinsic capacitance
● Very good manufacturing repeatability
ST Microelectronics
16 Pages / 0.43 MByte
ST Microelectronics
3 Pages / 0.31 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
STMICROELECTRONICS STD2NK100Z Power MOSFET, N Channel, 1.85A, 1kV, 6.25Ω, 10V, 3.75V
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