| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Polarity | N-CH |
| Power Dissipation | 35 W |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 35A |
| Rise Time | 4 ns |
| Input Capacitance (Ciss) | 725pF @25V(Vds) |
| Input Power (Max) | 35 W |
| Fall Time | 3.5 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 35W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Height | 2.4 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
As an alternative to traditional transistors, the STD35N3LH5 power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 35000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
ST Microelectronics
15 Pages / 0.84 MByte
ST Microelectronics
15 Pages / 0.2 MByte
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