| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 3 Ω |
| Polarity | N-Channel |
| Power Dissipation | 90 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 950 V |
| Breakdown Voltage (Drain to Source) | 950 V |
| Continuous Drain Current (Ids) | 4A |
| Rise Time | 7 ns |
| Input Capacitance (Ciss) | 460pF @25V(Vds) |
| Input Power (Max) | 90 W |
| Fall Time | 18 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 90W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STD5N95K3 is a SuperMESH3™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics" SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low ON-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
● 100% Avalanche tested
● Extremely large avalanche performance
● Very low intrinsic capacitances
ST Microelectronics
17 Pages / 0.77 MByte
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