STS10DN3LH5 Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	SOIC-8
Description:	SO N-CH 30V 10A
Documentation:	STS10DN3LH5 Datasheet (13 Pages)Package Outline Dimension on10 Page 11 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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STS10DN3LH5 Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Number of Channels	2 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.019 Ω
Polarity	N-CH
Power Dissipation	2.5 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	10A
Rise Time	22 ns
Input Capacitance (Ciss)	475pF @25V(Vds)
Input Power (Max)	2.5 W
Fall Time	2.8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2500 mW