| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.47 Ω |
| Polarity | N-Channel |
| Power Dissipation | 45 W |
| Threshold Voltage | 3.75 V |
| Drain to Source Voltage (Vds) | 400 V |
| Breakdown Voltage (Drain to Source) | 400 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 3.00 A |
| Rise Time | 6 ns |
| Input Capacitance (Ciss) | 305pF @25V(Vds) |
| Input Power (Max) | 45 W |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 45W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 6.6 mm |
| Size-Width | 2.4 mm |
| Size-Height | 6.2 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STD5NK40Z-1 is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
● 1.47R RDS (ON)
● Extremely high dV/dt capability
● 100% Avalanche tested
● Gate charge minimized
● Very low intrinsic capacitances
● Very good manufacturing repeatability
● -55 to 150°C Operating junction temperature range
ST Microelectronics
13 Pages / 0.58 MByte
ST Microelectronics
14 Pages / 0.58 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
n-Channel 400V - 1.47Ω - 3A To-220/To-220fp/Dpak/Ipak Zener-Protected Supermesh Power Mosfet
ST Microelectronics
N-CHANNEL 400V - 1.47Ω - 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
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