| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 22.0 A |
| Case/Package | TO-247 |
| Power Rating | 277 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.23 Ω |
| Polarity | N-Channel |
| Power Dissipation | 277 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 3450pF @25V |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 22.0 A |
| Rise Time | 94 ns |
| Input Capacitance (Ciss) | 3450pF @25V(Vds) |
| Fall Time | 47 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 277 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 5.31 mm |
| Size-Height | 20.82 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IRFP22N50APBF is a N-channel enhancement-mode Power MOSFET with low gate charge.
● Simple drive requirements
● Improved gate, avalanche and dynamic dV/dt ruggedness
● Fully characterized capacitance and avalanche voltage and current
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