| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 5.00 A |
| Case/Package | TO-252-3 |
| Power Rating | 96 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 96 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 5.00 A |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 400pF @25V(Vds) |
| Input Power (Max) | 96 W |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 96W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STD5NM60T4 is an N-channel MDmesh™ Power MOSFET has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The MDmesh™ is a new revolutionary power MOSFET technology that associates the multiple drain process with the company"s PowerMESH™ horizontal layout. The adoption of the company"s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition"s products.
● 100% Avalanche tested
● High dv/dt and avalanche capabilities
● Low input capacitance and gate charge
● Low gate input resistance
ST Microelectronics
18 Pages / 0.54 MByte
ST Microelectronics
3 Pages / 0.05 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
N-CHANNEL 650V @Tjmax- 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK MDMESH POWER MOSFET
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