| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 6.5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 2200 pF |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Continuous Drain Current (Ids) | 56.0 A, 80.0 A |
| Rise Time | 50 ns |
| Input Capacitance (Ciss) | 2200pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 11.5 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The STD65N55F3 is a STripFET™ N-channel enhancement-mode Power MOSFET designed with latest refinement of unique Single Feature Size™ strip-based process. The process decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low ON-resistance, rugged avalanche characteristics and low gate charge.
● Standard threshold drive
● 100% Avalanche tested
● -55 to 175°C Operating junction temperature range
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