STW19NM50N Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	TO-247-3
Description:	TO-247 N-CH 500V 14A
Documentation:	STW19NM50N Datasheet (15 Pages)Package Outline Dimension on10 Page 11 Page 12 Page 13 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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STW19NM50N Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	0.2 Ω
Polarity	N-Channel
Power Dissipation	110 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Continuous Drain Current (Ids)	14A
Rise Time	16 ns
Input Capacitance (Ciss)	1000pF @50V(Vds)
Input Power (Max)	110 W
Fall Time	17 ns
Operating Temperature (Max)	150 ℃
Power Dissipation (Max)	110W (Tc)