| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.2 Ω |
| Polarity | N-CH |
| Power Dissipation | 60 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 4.5A |
| Rise Time | 7.4 ns |
| Input Capacitance (Ciss) | 232pF @100V(Vds) |
| Input Power (Max) | 60 W |
| Fall Time | 22.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 60W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company"s strip layout to yield one of the world"s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
●Features
●• Extremely low gate charge
●• Lower RDS(on) x area vs previous generation
●• Low gate input resistance
●• 100% avalanche tested
●• Zener-protected
●Applications
●• Switching applications
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