TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 15 W |
Rise Time | 160 ns |
Breakdown Voltage (Collector to Emitter) | 30 V |
Continuous Collector Current | 5A |
hFE Min | 100 @500mA, 1V |
Input Power (Max) | 15 W |
DC Current Gain (hFE) | 200 |
Fall Time | 80 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 15000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.6 mm |
Size-Width | 6.2 mm |
Size-Height | 2.4 mm |
Operating Temperature | 150℃ (TJ) |
The STD888T4 is a PNP Low Voltage Transistor with medium current and high performance. It is manufactured in Planar technology by using a "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
● Very low collector to emitter saturation voltage
● Surface-mount power package
● In compliance with the 2002/93/EC European directive
ST Microelectronics
10 Pages / 0.18 MByte
ST Microelectronics
1 Pages / 0.42 MByte
ST Microelectronics
HIGH CURRENT HIGH PERFORMANCE LOW VOLTAGE PNP TRANSISTOR
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