| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Polarity | NPN |
| Power Dissipation | 35 W |
| Breakdown Voltage (Collector to Emitter) | 350 V |
| Continuous Collector Current | 4A |
| hFE Min | 1800 @2A, 2V |
| Input Power (Max) | 35 W |
| Fall Time | 1.5 µs |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 35000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | 150℃ (TJ) |
Do you need a device that can yield much higher current gains? Thanks to STMicroelectronics, the NPN STD901T Darlington transistor can amplify a current to meet your needs. This product"s maximum continuous DC collector current is 4 A, while its minimum DC current gain is 500@4A@2 V|1800@2A@2V. It has a maximum collector emitter saturation voltage of 2@20mA@2A V. This Darlington transistor array"s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 1.8@20mA@2A V. Its maximum power dissipation is 35000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V.
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