TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Polarity | N-CH |
Power Dissipation | 60 W |
Drain to Source Voltage (Vds) | 600 V |
Continuous Drain Current (Ids) | 5.5A |
Rise Time | 7.5 ns |
Input Capacitance (Ciss) | 320pF @100V(Vds) |
Input Power (Max) | 60 W |
Fall Time | 13.5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 60W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.6 mm |
Size-Width | 6.2 mm |
Size-Height | 2.4 mm |
Operating Temperature | 150℃ (TJ) |
Looking for a component that can both amplify and switch between signals within your circuit? The STD9N60M2 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 60000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.
ST Microelectronics
21 Pages / 1.43 MByte
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